http://www.eecg.toronto.edu/~johns/ece331/labs/IRF9510.pdf WebIRF9510, IRF9511, IRF9512, IRF9513. 6-6 FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE Typical Performance Curves Unless Otherwise Specified (Continued) ID, DRAIN CURRENT (A) 0 -6.0-1.2 -2.4 -3.6 -4.8 2.5 2.0 1.5 0 1.0 g fs
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WebBSP171P Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 365 460 pF Output capacitance C oss - 105 135 Reverse transfer capacitance C rss-40 55 Turn-on delay time t d(on)-6 8ns Rise time t r-25 33 Turn-off delay time t d(off) - 208 276 Fall time t f - 87 130 Gate Charge Characteristics2) Gate to source … WebThe IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry … middletown whole foods
IRF9510 Power MOSFET Vishay
WebDownload IRF9510 Datasheet: Quote: Find where to buy Quote . Some Part number from the same manufacture International Rectifier Corp. IRF9510S-100V Single P-channel HexFET Power MOSFET in a D2-Pak Package: IRF9520-100V Single P-channel HexFET Power MOSFET in a TO-220AB Package: IRF9520N: Web• Internal Thermal Overload Protection • Internal Short Circuit Current Limiting Constant with Temperature • Output Transistor Safe–Area Compensation • Floating Operation for High Voltage Applications • Eliminates Stocking many Fixed Voltages • Available in Surface Mount D2PAK and Standard 3–Lead Transistor Package Similar Part No. - LM337 Web2 www.irf.com S D G Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 4.9mH, RG = 25Ω, IAS = -16A. Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board. middletown westown movies